Large Pairing Jahn-Teller Distortions Around Divacancies in Crystalline Silicon
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چکیده
Ab initio atomic and electronic structures of neutral (V 0 2 ) and charged (V + 2 , V 2 , V 2 2 ) Si divacancies are investigated using bulk-terminated clusters with up to 320 Si atoms. For the rst time, the relaxed structures for V + 2 , V 0 2 , and V 2 are found to exhibit large pairing Jahn-Teller distortions consistent with electron paramagnetic resonance experiments. Atomic relaxations, JahnTeller and relaxation energies, and hyper ne parameters are calculated for various charge states and compared with available experimental data. The cluster size and the anisotropic nature of the relaxations play key roles in establishing the stability of the structures with large pairing distortions. Typeset using REVTEX
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تاریخ انتشار 1999